Since silicon single crystal is the base material of electronics industry, many electronic devices are based on it. Many electronic sensors are based on this material grown by the floating zone (FZ) process.
The crucial factors for growing silicon single crystal by the FZ process are the current density and frequency applied to the high-frequency (HF) inductor, the pull rate and rotational rate of the feed rod and single crystal and the pressure of the atmosphere. Precise determination of these parameters is very important for improving the quality of the grown crystal, and therefore, a lot of research has been focused on it.
In order to fabricate high-quality single crystals necessary to develop power semiconductor devices, Yu Nam Chol, a section head at the Faculty of Electronics, on the basis of the analysis of preceding studies, has performed three-dimensional transient simulations of the growth of FZ single crystal silicon using ANSYS, analyzed the influence of HF inductor type on the growth of single crystal and determined the optimum morphology.
The results show that stepped HF inductors form better temperature distribution in the melting zone than tilted HF inductors.
For more information, please refer to his paper “Modeling of HF Inductor and Influence on Electro-magnetic Field in Silicon FZ Process” in “Journal of Multiscale Modeling” (SCI).